A CMOS Class-E Cascode Power Amplifier for GSM Application
نویسنده
چکیده
The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in TSMC 0.18-μm CMOS technology present in this paper. Proposed Class E cascode PA topology is a single-stage topology in order to minimize the device stress problem. A parallel capacitor is connected across the transistors for efficiency enrichment also for dominating the effect of parasitic capacitances at the drain node. The simulation results point to that the PA delivers 12 dBm output power with 43.6% and 46.6% of power added efficiency (PAE) and drain efficiency (DE) respectively with 2.5-Volt power supply into a 50-Ω load. Index Terms —Class E, CMOS power amplifier, power added efficiency, switching amplifier.
منابع مشابه
Analysis and Design of High Gain, and Low Power CMOS Distributed Amplifier Utilizing a Novel Gain-cell Based on Combining Inductively Peaking and Regulated Cascode Concepts
In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created bycascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC).The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high ...
متن کاملA New Common-Mode Stabilization Method for a CMOS Cascode Class-E Power Amplifier with Driver Stage
This paper presents a new common-mode stabilization method for a CMOS differential cascode Class-E power amplifier with LCtank based driver stage. The stabilization method is based on the identification of the poles and zeros of the closed-loop transfer function at a critical node. By adding a series resistor at the common-gate node of the cascode transistor, the right-half-plane poles are move...
متن کاملA Novel Low Voltage, Low Power and High Gain Operational Amplifier Using Negative Resistance and Self Cascode Transistors
In this work a low power, low voltage and high gain operational amplifier is proposed. For this purpose a negative resistance structure is used in parallel with output to improve the achievable gain. Because of using self cascode transistors in the output, the proposed structure remains approximately constant in a relatively large output voltage swing causing an invariable gain. To evaluate the...
متن کاملA 2.45 GHz 30dBm differential 0.18 μm CMOS class-E power amplifier with 42% PAE
This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کامل